NGD18N40CLB

The NGD18N40CLB This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. NGD18N40CLB uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features of the NGD18N40CLB are:(1)Ideal for Coil?on?Plug Applications; (2)DPAK Package Offers Smaller Footprint for Increased Board Space; (3)Gate?Emitter ESD Protection; (4)Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load; (5)Integrated ESD Diode Protection; (6)New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area; (7)Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices; (8)Low Saturation Voltage; (9)High Pulsed Current Capability; (10)Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE); (11)Emitter Ballasting for Short?Circuit Capability.

The absolute maximum ratings of the NGD18N40CLB can be summarized as:(1)Collector-Emitter Voltage VCES :430 VDC; (2)Collector-Gate Voltage VCER :430 VDC; (3)Gate-Emitter Voltage VGE :18 VDC; (4)ESD (Machine Model) R = 0 , C = 200 pF ESD 800 V; (5)Operating and Storage Temperature Range TJ, Tstg :-55 to+175°C.

If you want to know more information about NGD18N40CLB such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .