DescriptionThe NGA-186 is a high performance InGaP/GaAs heterojunction bipolar transistor MMIC amplifier.A darlington configuration designed with InGaP process technology provides broadband performance up to 6 GHz with excellent thermal performance.The heterojunction of NGA-186increases breakdown ...
NGA-186: DescriptionThe NGA-186 is a high performance InGaP/GaAs heterojunction bipolar transistor MMIC amplifier.A darlington configuration designed with InGaP process technology provides broadband performa...
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The NGA-186 is a high performance InGaP/GaAs heterojunction bipolar transistor MMIC amplifier.A darlington configuration designed with InGaP process technology provides broadband performance up to 6 GHz with excellent thermal performance.The heterojunction of NGA-186 increases breakdown voltage and minimizes leakage current between junctions.
Features of the NGA-186 are:(1)12.0dB Gain,14.7dBm P1dB at 1950Mhz; (2)cascadable 50ohm:1.2:1 VSWR; (3)operates from single supply ; (4)low thermal resistance package; (5)unconditionally stable;(6)patented GaAs HBT Technology.
The absolute maximum ratings of the NGA-186 can be summarized as:(1)max.device current::110mA; (2)max. device voltage:6V; (3)max. RF input power:10dBm; (4)max.junction temp.:150; (5)operating temp.range:-40 to 85; (6)max. storage temp.:150.
If you want to know more information about NGA-186 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .