Transistors RF Silicon Germanium NPN Silicn Germanium Amp/Oscilltr
NESG3032M14-T3-A: Transistors RF Silicon Germanium NPN Silicn Germanium Amp/Oscilltr
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Packaging : | Tape |
Technical/Catalog Information | NESG3032M14-T3-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 2GHz |
Current - Collector (Ic) (Max) | 35mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 6mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 4.3V |
Gain | 15dB ~ 17.5dB |
Power - Max | 150mW |
Compression Point (P1dB) | 12.5dBm |
Package / Case | M14 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG3032M14 T3 A NESG3032M14T3A |