Transistors RF Silicon Germanium NPN SiGe High Freq
NESG3031M05-T1-A: Transistors RF Silicon Germanium NPN SiGe High Freq
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Power Dissipation : | 150 mW | Mounting Style : | SMD/SMT | ||
Package / Case : | M05 | Packaging : | Reel |
Technical/Catalog Information | NESG3031M05-T1-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 0.6dB ~ 0.95dB @ 2.4GHz ~ 5.2GHz |
Current - Collector (Ic) (Max) | 35mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 6mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 4.3V |
Gain | 16dB |
Power - Max | 150mW |
Compression Point (P1dB) | 13dBm |
Package / Case | M05 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG3031M05 T1 A NESG3031M05T1A |