Transistors RF Silicon Germanium NPN High Frequency
NESG2101M16-A: Transistors RF Silicon Germanium NPN High Frequency
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Emitter- Base Voltage VEBO : | 1.5 V | Continuous Collector Current : | 35 mA |
Power Dissipation : | 175 mW | Mounting Style : | SMD/SMT |
Package / Case : | SOT-343 |
Technical/Catalog Information | NESG2101M16-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 17GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 2GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 11dB ~ 13dB |
Power - Max | 190mW |
Compression Point (P1dB) | - |
Package / Case | M16 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG2101M16 A NESG2101M16A |