Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2031M05-T1-A: Transistors RF Silicon Germanium NPN SiGe High Freq
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Power Dissipation : | 175 mW | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-343 | Packaging : | Reel |
Technical/Catalog Information | NESG2031M05-T1-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 25GHz |
Noise Figure (dB Typ @ f) | 0.8dB ~ 1.1dB @ 2GHz |
Current - Collector (Ic) (Max) | 35mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 5mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 15dB ~ 17dB |
Power - Max | 175mW |
Compression Point (P1dB) | 13dBm |
Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG2031M05 T1 A NESG2031M05T1A |