Transistors RF Bipolar Small Signal NPN High Frequency
NE664M04-A: Transistors RF Bipolar Small Signal NPN High Frequency
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DescriptionThe NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFIC...
Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 5 V | Emitter- Base Voltage VEBO : | 1.5 V | ||
Continuous Collector Current : | 0.5 A | Power Dissipation : | 0.735 W | ||
Package / Case : | SOT-343 | Packaging : | Bulk |
Technical/Catalog Information | NE664M04-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 20GHz |
Noise Figure (dB Typ @ f) | - |
Current - Collector (Ic) (Max) | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 3V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 12dB |
Power - Max | 735mW |
Compression Point (P1dB) | 26dBm |
Package / Case | M04 |
Packaging | Bulk |
Drawing Number | * |
Mounting Type | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE664M04 A NE664M04A |