Transistors RF Bipolar Small Signal NPN High Frequency
NE662M16-T3-A: Transistors RF Bipolar Small Signal NPN High Frequency
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DescriptionThe NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFIC...
Configuration : | Single | Transistor Polarity : | NPN | ||
Continuous Collector Current : | 0.035 A | Power Dissipation : | 115 mW | ||
Package / Case : | M16 | Packaging : | Reel |
Technical/Catalog Information | NE662M16-T3-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 25GHz |
Noise Figure (dB Typ @ f) | 1.1dB ~ 1.5dB @ 2GHz |
Current - Collector (Ic) (Max) | 35mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 3.3V |
Gain | 20dB |
Power - Max | 115mW |
Compression Point (P1dB) | 11dBm |
Package / Case | M04 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE662M16 T3 A NE662M16T3A |