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NE662M16-A

Transistors RF Bipolar Small Signal NPN High Frequency

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SeekIC No. : 00218603 Detail

NE662M16-A: Transistors RF Bipolar Small Signal NPN High Frequency

NE662M16-A Data Sheet

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US $ .4~.75 / Piece | Get Latest Price
Part Number:
NE662M16-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.75
  • $.6
  • $.49
  • $.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 25 GHz Collector- Emitter Voltage VCEO Max : 3.3 V
Emitter- Base Voltage VEBO : 1.5 V Continuous Collector Current : 0.035 A
Power Dissipation : 0.115 W Package / Case : M16    

Description

Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Continuous Collector Current : 0.035 A
Emitter- Base Voltage VEBO : 1.5 V
Maximum Operating Frequency : 25 GHz
Collector- Emitter Voltage VCEO Max : 3.3 V
Power Dissipation : 0.115 W
Package / Case : M16


Parameters:

Technical/Catalog InformationNE662M16-A
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB ~ 1.5dB @ 2GHz
Current - Collector (Ic) (Max)35mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 2V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.3V
Gain20dB
Power - Max115mW
Compression Point (P1dB)11dBm
Package / CaseM04
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE662M16 A
NE662M16A



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