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NE450184C-T1-A

Transistors RF GaAs Ult LW Noise HJ FET 1.0dB NF

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SeekIC No. : 00219224 Detail

NE450184C-T1-A: Transistors RF GaAs Ult LW Noise HJ FET 1.0dB NF

NE450184C-T1-A Data Sheet

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Part Number:
NE450184C-T1-A
Mfg:
CEL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Technology Type : HEMT Frequency : 24 GHz
Gain : 10 dB Noise Figure : 1 dB
Forward Transconductance gFS (Max / Min) : 40 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 80 mA
Maximum Operating Temperature : + 150 C Power Dissipation : 165 mW
Mounting Style : SMD/SMT Package / Case : S0-1    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Continuous Drain Current : 80 mA
Noise Figure : 1 dB
Gate-Source Breakdown Voltage : - 3 V
Gain : 10 dB
Drain Source Voltage VDS : 4 V
Power Dissipation : 165 mW
Package / Case : S0-1
Forward Transconductance gFS (Max / Min) : 40 mS
Frequency : 24 GHz


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