Features: `Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP, Ga = 15.5 dB TYP. at f = 4 GHz`Gate Width: Wg = 280 mSpecifications Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS -3.0 V Drain Current ID IDSS mA Total Power Temperature Ptot 300 ...
NE434S01: Features: `Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP, Ga = 15.5 dB TYP. at f = 4 GHz`Gate Width: Wg = 280 mSpecifications Drain to Source Voltage VDS 4.0 V Gate t...
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Drain to Source Voltage | VDS |
4.0 | V |
Gate to Source Voltage | VGS |
-3.0 | V |
Drain Current | ID |
IDSS |
mA |
Total Power Temperature | Ptot |
300 | mA |
Channel Temperature | Tch |
125 | |
Storage Temperature | Tstg |
-65 to +12 |
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.