MOSFET L-S Band Lo No Amp
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Drain-Source Breakdown Voltage : | 4 V | Gate-Source Breakdown Voltage : | - 3 V |
Continuous Drain Current : | 5 mA | Mounting Style : | SMD/SMT |
Package / Case : | SOT-343 |
`Super Low noise figure & High Associated Gain
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz
4 pins super mini mold package
Wg = 800 m
Parameter | Symbol | Ratings | Unit |
Drain to Source Voltage | VDS |
4.0 | V |
Gate to Source Voltage | VGS |
-3.0 | V |
Drain Current | ID |
IDSS |
mA |
Gate Current | IG |
100 | A |
Total Power Temperature | Ptot |
150 | mA |
Channel Temperature | Tch |
125 | |
Storage Temperature | Tstg |
-65 to +12 |