NE3514S02-T1C-A, US $ .61-.61 , CEL, NE3514S02-T1C-A DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219193 Detail

NE3514S02-T1C-A: Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET

NE3514S02-T1C-A Data Sheet

US $ .61~.61 / Piece | Get Latest Price

Part Number:: NE3514S02-T1C-A
Mfg:: CEL
Supply Ability:: 5000

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Upload time: 2024/11/21

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Technology Type :	HEMT	Frequency :	20 GHz
Gain :	10 dB	Noise Figure :	0.75 dB
Forward Transconductance gFS (Max / Min) :	55 mS	Drain Source Voltage VDS :	4 V
Gate-Source Breakdown Voltage :	- 3 V	Continuous Drain Current :	70 mA
Maximum Operating Temperature :	+ 125 C	Power Dissipation :	165 mW
Mounting Style :	SMD/SMT	Package / Case :	S0-2

Description

Continuous Drain Current : 70 mA
Mounting Style : SMD/SMT
Technology Type : HEMT
Forward Transconductance gFS (Max / Min) : 55 mS
Gate-Source Breakdown Voltage : - 3 V
Gain : 10 dB
Frequency : 20 GHz
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Power Dissipation : 165 mW
Noise Figure : 0.75 dB
Package / Case : S0-2

Parameters:

Technical/Catalog Information	NE3514S02-T1C-A
Vendor	NEC Electronics
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	S0-2
FET Type	HFET
Typical RF Application	DBS
Drain to Source Voltage (Vdss)	4.0 V [Nom]
Voltage Gate to Source (Vgs)	3.0 V [Max]
Continuous Drain Current (Id)	70.00 mA [Nom]
Power Dissipation	165.000 mW [Max]
Packaging	Tape & Reel, 7"
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NE3514S02 T1C A NE3514S02T1CA

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