Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-T1C-A: Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET
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Technology Type : | HEMT | Frequency : | 12 GHz | ||
Gain : | 13.5 dB | Noise Figure : | 0.35 dB | ||
Forward Transconductance gFS (Max / Min) : | 55 mS | Drain Source Voltage VDS : | 4 V | ||
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 70 mA | ||
Maximum Operating Temperature : | + 125 C | Power Dissipation : | 165 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | S0-2 |
Technical/Catalog Information | NE3512S02-T1C-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel JFET |
Voltage - Rated | 38V |
Current Rating | 70mA |
Package / Case | S02 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE3512S02 T1C A NE3512S02T1CA |