Features: • Low noise RIN = -155 dB/Hz Max.• Low distortion CSO = -55 dBc Max. CTB = ð60 dBc Max.• High output power Pf = 16.0 mW• Long wavelength OP = 1310 nm• High isolation 40 dB• Internal InGaAs monitor PD• Internal thermoelectric cooler• Her...
NDL7673P: Features: • Low noise RIN = -155 dB/Hz Max.• Low distortion CSO = -55 dBc Max. CTB = ð60 dBc Max.• High output power Pf = 16.0 mW• Long wavelength OP = 1310 nm• Hig...
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Parameter |
Symbol |
Ratings |
Unit |
Operating Case Temperature |
TC |
-20 to +65 |
|
Storage Temperature |
Tstg |
-40 to +70 |
|
Lead Soldering Temperature (10 s) |
Tsld |
260 |
|
Optical Output Power |
Pf |
25 |
mW |
Forward Current of LD |
IF |
150 |
mA |
Reverse Voltage of LD |
VR |
2.0 |
V |
Forward Current of PD |
IF |
10 |
mA |
Reverse Voltage of PD |
VR |
20 |
V |
Cooler Current |
IC |
1.0 |
A |
Cooler Voltage |
VC |
2.0 |
V |
NDL7673P is a 1310 nm DFB (Distributed Feed-Back) laser diode, that has a newly developed Strained Multiple Quantum Well (MQW) structure, butterfly package module with optical isolator. NDL7673P is especially designed for a 16 mW light source of CATV analog applications.