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NDB410BE

Features: `9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design (...

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SeekIC No. : 004433186 Detail

NDB410BE: Features: `9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zen...

NDB410BE Data Sheet

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Part Number:
NDB410BE
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Features:

`9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
 Parameter
NDP410A NDP410AE
NDB410A NDB410AE
NDP410B NDP410BE
NDB410B NDB410BE
Units
VDSS
 Drain-Source Voltage
100
V
VDGR
 Drain-Gate Voltage (RGS < 1 M)
100
V
VGSS
 Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID
 Drain Current - Continuous
- Pulsed
9
8
A
36
32
PD
 Total Power Dissipation
Derate above 25°C
50
W
0.33
W/
TJ,TSTG
 Operating and Storage Temperature Range
-65 to 175
TL
 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

These N-channel enhancement mode power field effect transistors NDB410BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB410BE is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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