Features: `High Breakdown Voltage: 220 V`Normally On Low rDS Switch: 9 `Low Input and Output Leakage`Low-Power Drive Requirement`Low Input CapacitanceApplication`Normally On Switching Circuits`Current Sources/Limiters`Power Supply, Converter Circuits`Solid-State Relays`Telecom SwitchesSpecific...
ND2012L: Features: `High Breakdown Voltage: 220 V`Normally On Low rDS Switch: 9 `Low Input and Output Leakage`Low-Power Drive Requirement`Low Input CapacitanceApplication`Normally On Switching Circuits`C...
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Parameter |
Symbol |
ND2012L |
ND2020L |
Unit | |
Drain-Source Voltage |
VDS |
200 |
200 |
V | |
Gate-Source Voltage |
VGS |
±30 |
±30 | ||
Continuous Drain Current (TJ = 150) | TA= 25 |
ID |
0.16 |
0.132 |
A |
TA= 100 |
0.1 |
0.083 | |||
Pulsed Drain Currenta |
IDM |
0.8 |
0.8 | ||
Power Dissipation | TA= 25 |
PD |
0.8 |
0.8 |
W |
TA= 100 |
0.32 |
0.32 | |||
Maximum Junction-to-Ambient |
RthJA |
156 |
156 |
/W | |
Operating Junction and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
Notes
a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197. Applications information may also be obtained via FaxBack, request document #70612.