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N16T1630C2B

Features: • Single Wide Power Supply Range 2.7 to 3.6 Volts• Very low standby current 100µA at 3.0V (Max)• Very low operating current 2.0mA at 3.0V and 1µs (Typical)• Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operati...

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SeekIC No. : 004432542 Detail

N16T1630C2B: Features: • Single Wide Power Supply Range 2.7 to 3.6 Volts• Very low standby current 100µA at 3.0V (Max)• Very low operating current 2.0mA at 3.0V and 1µs (Typical)...

N16T1630C2B Data Sheet

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Part Number:
N16T1630C2B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

• Single Wide Power Supply Range 2.7 to 3.6 Volts
• Very low standby current 100µA at 3.0V (Max)
• Very low operating current 2.0mA at 3.0V and 1µs (Typical)
• Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
• Very fast access time 55ns address access option 35ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green option for BGA package


Specifications

Item Symbol Rating Unit
Voltage on any pin relative to VSS VIN,OUT 0.3 to VCC+0.3 V
Voltage on VCC Supply Relative to VSS VCC 0.3 to 4.5 V
Power Dissipation PD 500 mW
Storage Temperature TSTG 40 to 125
Operating Temperature TA -40 to +85
Soldering Temperature and Time TSOLDER 260, 10sec

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The N16T1630C2B is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB ) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N16T1630C2B is optimal for various applications where low-power is critical such as battery backup and hand-held devices.

The N16T1630C2B can operate over a very wide temperature range of -40 to +85 and is available in JEDEC standard BGA packages compatible with other standard 1Mb x 16 SRAMs.




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