Features: · High frequency operation· Low CRES / CIES ratio (no cross-conduction susceptbility)· Very soft ultra fast recovery antiparallel diodeApplication·High frequency inverters·SMPS and PFC in both hard switch and resonant topologies·Motor drivers, UPSSpecifications Symbol Parameter Va...
Max247: Features: · High frequency operation· Low CRES / CIES ratio (no cross-conduction susceptbility)· Very soft ultra fast recovery antiparallel diodeApplication·High frequency inverters·SMPS and PFC in ...
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Symbol | Parameter | Value | Unit |
VCES | Collector-emitter voltage (VGS = 0) | 600 | V |
IC(1) | Collector current (continuous) at TC = 25 | 80 | A |
IC(1) | Collector current (continuous) at TC = 100 | 50 | A |
ICM(2) | Collector current (pulsed) | 190 | A |
IF | Diode RMS forward current at TC = 25 | 30 | A |
VGE | Gate-emitter voltage | ±20 | V |
PTOT | Total dissipation at TC = 25 | 260 | W |
Tstg | Storage temperature | 55 to 150 | |
Tj | Operating junction temperature |
Using the latest high voltage technology based on a patented strip layout, Max247 STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.