Features: • Light Activated Photo Transistor Chip• Planar NPN• Aluminum Wire bondable• Backside Metallization - Gold• Die Attach methods: Eutectic or EpoxySpecifications SYSMBOL CHARACTERISTIC CONDITIONS MIN TYP MAX UNITS BVCEO Collector -Emitter Voltag...
MXP1126-C: Features: • Light Activated Photo Transistor Chip• Planar NPN• Aluminum Wire bondable• Backside Metallization - Gold• Die Attach methods: Eutectic or EpoxySpecification...
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Features: • Low Dark Current• Low Noise• High Break Down Voltage• Fast Ris...
Features: • Low Dark Current• Low Noise• High Break Down Voltage• Fast Ris...
SYSMBOL | CHARACTERISTIC | CONDITIONS | MIN | TYP | MAX | UNITS |
BVCEO | Collector -Emitter Voltage | IC=100A | 500 | Volts | ||
BVEBO | Emitter -BaseVoltage | IE=100A | 20 | Volts | ||
BVCBO | Collector-Base Voltage | IC=100A | 500 | Volts | ||
ID | Collector Current | VCE=10Volts | 30 | nAmps | ||
hFE | Beta | VCE=5Volts,IC=1mA | 25 |