MXP1126-C

Features: • Light Activated Photo Transistor Chip• Planar NPN• Aluminum Wire bondable• Backside Metallization - Gold• Die Attach methods: Eutectic or EpoxySpecifications SYSMBOL CHARACTERISTIC CONDITIONS MIN TYP MAX UNITS BVCEO Collector -Emitter Voltag...

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MXP1126-C Picture
SeekIC No. : 004432018 Detail

MXP1126-C: Features: • Light Activated Photo Transistor Chip• Planar NPN• Aluminum Wire bondable• Backside Metallization - Gold• Die Attach methods: Eutectic or EpoxySpecification...

floor Price/Ceiling Price

Part Number:
MXP1126-C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

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Product Details

Description



Features:

• Light Activated Photo Transistor Chip
• Planar NPN
• Aluminum Wire bondable
• Backside Metallization - Gold
• Die Attach methods: Eutectic or Epoxy



Specifications

SYSMBOL CHARACTERISTIC CONDITIONS MIN TYP MAX UNITS
BVCEO Collector -Emitter Voltage IC=100A   500   Volts
BVEBO Emitter -BaseVoltage IE=100A   20   Volts
BVCBO Collector-Base Voltage IC=100A   500   Volts
ID Collector Current VCE=10Volts   30   nAmps
hFE Beta VCE=5Volts,IC=1mA   25    



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