Features: • Light Activated Photo SCR• Planar PNPN• High Voltage• Cathode and Gate pads are Aluminum Wire bondable• Anode is backside of die• Backside metallization - Gold• Die Attach methods: eutectic or epoxySpecifications SYMBOL CHARACTERISTIC CO...
MXP1018-C: Features: • Light Activated Photo SCR• Planar PNPN• High Voltage• Cathode and Gate pads are Aluminum Wire bondable• Anode is backside of die• Backside metallizati...
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Features: • Low Dark Current• Low Noise• High Break Down Voltage• Fast Ris...
Features: • Low Dark Current• Low Noise• High Break Down Voltage• Fast Ris...
SYMBOL | CHARACTERISTIC | CONDITIONS | IMN | TYP | MAX | UNITS |
VDM | Off-State Voltage | 660 | Volts | |||
VRM | Reverse Voltage | 550 | Volts | |||
IDM | Off-State Leakage Current | 0.2 | uAmps | |||
IRM | Reverse Leakage | 0.5 | uAmps | |||
IGT | Gate Trigger Current | 1.3 | uAmps | |||
IH | Holding Current | 40 | uAmps | |||
tON | Turn-On Time | 5 | useconds |