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MX29LV640BB

Features: GENERAL FEATURES• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase, and program operations• 8,388,608 x 8 / 4,194,304 x 16 switchable• Sector structure- 8KB (4KW) x 8 and 64KB(32KW) x 127• Sector Protection/Chip Unprotect- Provides sector group prote...

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SeekIC No. : 004431777 Detail

MX29LV640BB: Features: GENERAL FEATURES• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase, and program operations• 8,388,608 x 8 / 4,194,304 x 16 switchable• Sector structure- 8KB...

MX29LV640BB Data Sheet

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Part Number:
MX29LV640BB
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 8,388,608 x 8 / 4,194,304 x 16 switchable
• Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 127
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent program or erase operation in the protected sector group
- Provides chip unprotect function to allow code changes
- Provides temporary sector group unprotect function for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word area for code or data that can be permanently protected.
- Once this sector is protected, it is prohibited to program or erase within the sector again.
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power supply Flash
PERFORMANCE
• High Performance
- Fast access time: 90/120ns
- Fast program time: 11us/word, 45s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
• Low Power Consumption
- Low active read current: 9mA (typical) at 5MHz
- Low standby current: 0.2uA (typ.)
• Minimum 100,000 erase/program cycle
• 10 years data retention
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and provide the host system to access.
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
- Data# polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status
- ACC (high voltage) accelerates programming time for higher throughput during system
PACKAGE
• 48-pin TSOP
• 63-Ball CSP
• All Pb-free devices are RoHS Compliant


Pinout

Connection Diagram


Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . . . .... -65 to +150
Ambient Temperature
with Power Applied. . . . . . . . . . . . .  -65 to +125
Voltage with Respect to Ground
   VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
   A9, OE#, ACC, and
   RESET# (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
   All other pins (Note 1) . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA

Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20ns.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#,and RESET# may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The MX29LV640BT/MX29LV640BB is a 64-mega bit Flash memory organized as 8M bytes of 8 bits or 4M words of 16 bits.MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29LV640BT/MX29LV640BB is packaged in 48-pin TSOP and 63-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.The standard MX29LV640BT/BB offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,the MX29LV640BT/MX29LV640BB has separate chip enable (CE#) and output enable (OE#) controls.MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV640BT/MX29LV640BB uses a command register to manage this functionality.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29LV640BT/MX29LV640BB uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V.




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