MX29LV320B

Features:

• 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector Structure
   - 8K-Byte x 8 and 64K-Byte x 63
• Extra 64K-Byte sector for security
   - Features factory locked and identifiable, and cus-tomer lockable
• Twenty-Four Sector Groups
   - Provides sector group protect function to prevent pro-gram or erase operation in the protected sector group
   - Provides chip unprotect function to allow code chang-ing
   - Provides temporary sector group unprotect function for code changing in previously protected sector groups
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program opera-tions
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power sup-ply Flash


Pinout




Specifications

Storage Temperature
Plastic Packages . . . . . . . . .. . . . ..... . . . . .....  . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . ..... . . . . ..... . . . . .... -65oC to +125oC
Voltage with Respect to Ground
    VCC (Note 1) . . . . . . . .. . . . ..... . . . . ..... .  . . . . . . . . . -0.5 V to +4.0 V
    A9, OE, and
    RESET(Note 2) . . . . . . .. . . . ..... . . . . ..... . . . . . . . ....-0.5 V to +12.5 V
    All other pins (Note 1) . . . . . . . ..... . . . . ....... . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . .. . .. ..... . . . . ..... . .  . 200 mA


Description

The MX29LV320T/MX29LV320B is a 32-mega bit Flash memory or-ganized as 4M bytes of 8 bits and 2M words of 16 bits.MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.The MX29LV320T/B is packaged in 48-pin TSOP and 48-ball CSP.  It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX29LV320T/MX29LV320B offers access time as fast as 70ns, allowing operation of high-speed microproces- sors without wait states.  To eliminate bus contention, the MX29LV320T/B has separate chip enable (CE) and output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.  The MX29LV320T/MX29LV320B uses a command register to manage this functionality.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles.  The MXIC cell is designed to optimize the erase and program mechanisms.  In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.