MX29LV004T

Features:

* Extended single - supply voltage range 2.7V to 3.6V
* 524,288 x 8
* Single power supply operation
- 3.0V only operation for read, erase and program
operation
* Fast access time: 55R/70/90ns
* Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
* Command register architecture
- Byte Programming (9us typical)
- Sector Erase (Sector structure 16K-Byte x 1,
8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)
* Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
* Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any  sector that is not being erased,
then resumes the erase.
* Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
* Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
* Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
* 100,000 minimum erase/program cycles
* Latch-up protected to 100mA from -1V to VCC+1V
* Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
* Low VCC write inhibit is equal to or less than 2.3V
* Package type:
- 40-pin TSOP
- 32-pin PLCC
* Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash

Pinout




Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . . . -65   to +150
Ambient Temperature
with Power Applied. . . . . . . . . . . -65   to +125
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA


Description

The MX29LV004T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits.  MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.  The MX29LV004T/ B is pack aged in 40-pin TSOP and 32-pin PLCC.  It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX29LV004T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states.  To eliminate bus contention, the MX29LV004T/B has separate chip enable (CE) and out put enable (OE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.  The MX29LV004T/B uses a command register to manage this functionality.  The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining  maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles.  The MXICcell is designed to optimize the erase and programming mechanisms.  In addition, the combination of advanced  tun nel oxide processing and low internal electric fields for erase and program operations produces reliable cycling.  The MX29LV004T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/ Erase algori thms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process.  Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.