Features: GENERAL FEATURES• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase, and program operations• Configuration- 16,777,216 x 8 / 8,388,608 x 16 switchable• Sector structure- 64KB(32KW) x 256• Latch-up protected to 250mA from -1V to VCC + 1V• Low VCC...
MX29LA129M: Features: GENERAL FEATURES• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase, and program operations• Configuration- 16,777,216 x 8 / 8,388,608 x 16 switchable• Secto...
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Features: SpecificationsDescription The MX29F001T/B is a 1-mega bit Flash memory organized as 128K...
The MX29LA129M H/L is a 128-mega bit Flash memory organized as 16M bytes of 8 bits or 8M words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LA129M H/L is packaged in 56-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.
The standard MX29LA129M H/L offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LA129M H/L has separate chip enable (CEx) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionalitywith in-circuit electrical erasure and programming. The MX29LA129M H/L uses a command register to manage this functionality.
MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29LA129M H/L uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V.