MX29L1611G

Features:

• 3.3V ± 10% for write and read operation
• 11V Vpp erase/programming operation
• Endurance: 100 cycles
• Fast random access time: 90ns/100ns/120ns
• Fast page access time: 30ns (Only for 29L1611PC-90/10/12)
• Sector erase architecture
  - 32 equal sectors of 64k bytes each
  - Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
  - Automatically erases any one of the sectors or the whole chip
  - Automatically programs and verifies data at specified addresses
• Status Register feature for detection of program or erase cycle completion
• Low VCC write inhibit is equal to or less than 1.8V
• Software data protection
• Page program operation
  - Internal address and data latches for 64 words per page
  - Page programming time: 5ms typical
• Low power dissipation
  - 50mA active current
  - 20uA standby current
• Two independently Protected sectors
• Package type
  - 42 pin plastic DIP
  * For page mode read only


Pinout




Specifications

RATING	VALUE
Ambient Operating Temperature	0 to 70
Storage Temperature	-65 to 125
Applied Input Voltage	-0.5V to Vcc+0.5V
Applied Output Voltage	-0.5V to Vcc+0.6V
VCC to Ground Potential	-0.5V to 4.0V
A9	-0.5V to 12.5V
BYTE/VPP	-0.5V to 11.5V

Description

The MX29L1611G is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29L1611G includes 32 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29L1611G is packaged in 42 pin PDIP.

The standard MX29L1611G offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention,the MX29L1611G has separate chip enable CE and, output enable (OE).

MXIC's Flash memories augment EPROM functionality with electrical erasure and programming. The MX29L1611G uses a command register to manage this functionality.

MX29L1611G does require high input voltages for programming. Commands require 11V input to determine the operation of the device. Reading data out of the device is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents even after 100 cycles. The MXIC's cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29L1611G uses a 11V Vpp supply to perform the Auto Erase and Auto Program algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V.