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MX29F400C

Features: • 524,288 x 8/262,144 x 16 switchable• Single power supply operation- 5.0V only operation for read, erase and program operation• Fast access time: 55/70/90ns• Compatible with MX29F400T/B device• Low power consumption- 40mA maximum active current(5MHz)- 1uA t...

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SeekIC No. : 004431724 Detail

MX29F400C: Features: • 524,288 x 8/262,144 x 16 switchable• Single power supply operation- 5.0V only operation for read, erase and program operation• Fast access time: 55/70/90ns• Compa...

MX29F400C Data Sheet

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Part Number:
MX29F400C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 524,288 x 8/262,144 x 16 switchable
• Single power supply operation
- 5.0V only operation for read, erase and program operation
• Fast access time: 55/70/90ns
• Compatible with MX29F400T/B device
• Low power consumption
- 40mA maximum active current(5MHz)
- 1uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1, 8KBytex2, 32K-Bytex1, and 64K-Byte x7)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends an erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase
• Status Reply
- Data# Polling & Toggle bit for detection of program and erase cycle completion
• Ready/Busy pin (RY/BY#)
- Provides a hardware method of detecting program or erase cycle completion
• Sector protect/chip unprotect for 5V only system
• Sector protection
- Hardware method to disable any combination of sectors from program or erase operations
- Temporary sector unprotect allows code changes in previously locked sectors
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- 44-pin SOP
- 48-pin TSOP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power supply Flash
• 20 years data retention


Pinout

Connection Diagram


Specifications

Ambient Operating Temperature.... -40 to 85 (*)
Ambient Temperature with Power .... -55 to 125
Applied
Storage Temperature..........  -65 to 125
Applied Input Voltage ..........  -0.5V to 7.0V
Applied Output Voltage ..........-0.5V to 7.0V
VCC to Ground Potential.........  -0.5V to 7.0V
A9.................... -0.5V to 13.5V

NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are subject to change.
* The automotive grade is under development.




Description

The MX29F400C T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits or 256K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29F400C T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F400C T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F400C T/B has separate chip enable (CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F400C T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling.

The MX29F400C T/B uses a 5.0V±10% VCC supply to perform the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.




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