MX29F1611

NOTICE:
Specifications contained within the following tables are subject to change.

The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8.The MX29F1611 includes 16-128KB(131,072 Bytes)
blocks or 16-64KW(65,536 Words)blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory and fast pagemode access. The MX29F1611 is packaged 44-pin SOP. It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers.

The standard MX29F1611 offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29F1611 has separate chip enable CE, output enable (OE), and write enable (WE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F1611 uses a command register to manage this functionality.

To allow for simple in-system reprogrammability, the MX29F1611 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents even after 10,000 cycles. The MXIC's cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F1611 uses a 5V ± 5% VCC supply to perform the Auto Erase and Auto Program algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V.