DescriptionThe MX29F022NTQC-12 is one member of the MX29F022N series.MXIC's Flash technology reliably stores memory contents even after 100,000 erase and program cycles.The MXIC cell is designed to optimize the erase and programming mechanisms.In addition, the combination of advanced tunnel oxide ...
MX29F022NTQC-12: DescriptionThe MX29F022NTQC-12 is one member of the MX29F022N series.MXIC's Flash technology reliably stores memory contents even after 100,000 erase and program cycles.The MXIC cell is designed to ...
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Features: SpecificationsDescription The MX29F001T/B is a 1-mega bit Flash memory organized as 128K...
The MX29F022NTQC-12 is one member of the MX29F022N series.MXIC's Flash technology reliably stores memory contents even after 100,000 erase and program cycles.The MXIC cell is designed to optimize the erase and programming mechanisms.In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process.Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.
Features of the MX29F022NTQC-12 are:(1)chip protect/unprotect for 5V only system or 5V/12V system; (2)100,000 minimum erase/program cycles; (3)latch-up protected to 100mA from -1 to VCC+1V; (4)automatically erase any combination of sectors or the whole chip with erase suspend capability.; (5)automatically programs and verifies data atspecified address; (6)low VCC write inhibit is equal to or less than 3.2V; (7)suspends an erase operation to read data from,or program data to, a sector that is not being erased,then resumes the erase operation.
The absolute maximum ratings of the MX29F022NTQC-12 can be summarized as:(1)applied input voltage:-0.5V to 7.0V;(2)applied output voltage:-0.5V to 7.0V;(3)storage temperature:-65 to 125;(4)ambient operating temperature:0 to 70;(5)VCC to ground potential:-0.5V to 7.0V.If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation.The device must be reset to use other sectors.Write the Reset command sequence to the device, and then execute program or erase command sequence.This allows the system to continue to use the other active sectors in the device.If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused).