MX29F016

.Single power supply 5V operation for read, erase and program
. Fast access time: 90/120ns
. Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
. Command register architecture
- Byte Programming (7us typical)
- Sector Erase:32 equal sector with of 64KByte each
. Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with Erase Suspend capability.
- Automatically program and verify data at specified address
. Erase suspend/Erase Resume
- Suspends an erase operation to read data from,
  or program data to, another sector that is not being
  erased, then resumes the erase.
. Status Reply
- Data polling & Toggle bit for detection of program and erase cycle completion.
. Group Sector protect/unprotect for 5V/12V system.
. Group Sector protection
- Hardware sector protect/unprotect method for each group which consists of two adjacent sectors
- Temporary group sector  unprotect allows code changes in previously locked sectors
. 100,000 minimum erase/program cycles
. Latch-up protected to 100mA from -1V to VCC+1V
. Low VCC write inhibit is equal to or less than 3.2V
. Package type:
- 40-pin TSOP, 44-pin SOP, 48-pin TSOP
. Compatibility with JEDEC standard
- Pinout and software compatible with single-power supply Flash

The MX29F016 is a 16-mega bit Flash memory organized as 2M bytes of 8 bits.  MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.  The MX29F016 is packaged in 40-pin TSOP or 44-pin SOP, 48-pin TSOP.  It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX29F016 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states.  To eliminate bus contention, the MX29F016 has separate chip enable (CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.  The MX29F016 uses a command register to manage this functionality.  The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles.  The MXIC cell is designed to optimize the erase and program mechanisms.  In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F016 uses a 5.0V±10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.