MX29F002TTI-12

The MX29F002TTI-12 is one member of the MX29F002TTI family which is designed as the 2M-bit [256K x 8] CMOS flash memory that has sone points of features:(1)262,144x 8 only; (2)Fast access time: 55/70/90/120ns; (3)Low power consumption: 30mA maximum active current(5MHz) and 1uA typical standby current; (4)Programming and erasing voltage 5V ?10%; (5)Command register architecture: Byte Programming (7us typical) and Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte; (6)x1, and 64K-Byte x 3); (7)Auto Erase (chip & sector) and Auto Program: Automatically erase any combination of sectors or the whole chip with Erase Suspend capability and Automatically programs and verifies data at specified address; (8)100,000 minimum erase/program cycles; (9)Latch-up protected to 100mA from -1 to VCC+1V; (10)Status Reply; (11)Hardware RESET pin(only for 29F002T/B): Resets internal state machine to read mode; (12)Low VCC write inhibit is equal to or less than 3.2V.

The MX29F002TTI-12 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states, and uses a command register to manage this functionality. Also this device is available in 32-pin PDIP,PLCC and 32-pin TSOP(I) packages.

The absolute maximum ratings of the MX29F002TTI-12 can be summarized as:(1)Ambient Operating Temperature: 0 to 70 ;(2)Storage Temperature: -65 to 125;(3)Applied Input Voltage: -0.5 V to 7.0 V;(4)Applied Output Voltage: -0.5 V to 7.0 V;(5)VCC to Ground Potential: -0.5 V to 7.0 V;(6)A9 & VPP: -0.5 V to 13.5 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .