MX26LV800T Selling Leads, Price trend, MX26LV800T DataSheet download, circuit diagram from SeekIC.com

Features: • Extended single - supply voltage range 3.0V to 3.6V• 1,048,576 x 8/524,288 x 16 switchable• Single power supply operation- 3.0V only operation for read, erase and program operation• Fast access time: 55/70ns• Low power consumption- 30mA maximum active curr...

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SeekIC No. : 004431643 Detail

MX26LV800T: Features: • Extended single - supply voltage range 3.0V to 3.6V• 1,048,576 x 8/524,288 x 16 switchable• Single power supply operation- 3.0V only operation for read, erase and progr...

MX26LV800T Data Sheet

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Part Number:: MX26LV800T
Supply Ability:: 5000

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Product Details

Description

Features:

• Extended single - supply voltage range 3.0V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte/word Programming (55us/70us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase verify capability.
- Automatically program and verify data at specified address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 48-pin TSOP
- 48-ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power supply Flash
• 20 years data retention

Pinout

Connection Diagram

Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . . . -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2) . . . . . . . . . . . . . . . -0.5 V to +12 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . .200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot
VSS to -2.0 V for periods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to
20 ns.
2. Minimum DC input voltage on pins A9, OE#, and
RESET# is -0.5 V. During voltage transitions, A9, OE#,
and RESET# may overshoot VSS to -2.0 V for periods
of up to 20 ns. See Figure 6. Maximum DC input
voltage on pin A9 is +12 V which may overshoot to
13.5V for periods up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.

Description

The MX26LV800T/B is a 8-mega bit high speed Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's high speed Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX26LV800T/B is packaged in 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX26LV800T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26LV800T/B has separate chip enable (CE#) and output enable (OE#) controls.

MXIC's high speed Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX26LV800T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC high speed Flash technology reliably stores memory contents even after 2,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV800T/B uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V.

MX26LV800T

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