Features: • 2,097,152 x 16 byte structure• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase, and program operations• Low Vcc write inhibit is equal to or less than 2.5V• Compatible with JEDEC standard• High Performance- Fast access time: 90/120ns (typ.)-...
MX26L3220: Features: • 2,097,152 x 16 byte structure• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase, and program operations• Low Vcc write inhibit is equal to or less than 2....
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Features: • 128K x 8 organization• +5V operating power supply• +12.75V program/e...
Storage Temperature
Plastic Packages . . . . . . . . . . . . . -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . .-0.5 V to +4.0 V
A9, OE , and
RESET (Note 2) . . . . . . . . . . . . . . .-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . .0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . -40°C to +85°C
VCC Supply Voltages
VCC for full voltage range. . . . . . . . . +2.7 V to 3.6 V
The MX26L3220 is a 32M bit MTP EPROMTM organizedas 2M bytes of 16 bits. MXIC's MTP EPROMTM offer the most cost-effective and reliable read/write non-volatile random access memory. The MX26L3220 is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.
The standard MX26L3220 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26L3220 has separate chip enable (CE) and output enableOE controls. MXIC's MTP EPROMTM augment EPROM functionality with in-circuit electrical erasure and programming. The MX26L3220 uses a command register to manage this functionality.
MXIC's MTP EPROMTM technology reliably stores memory contents even after 100 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.
The MX26L3220 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXIC's proprietary non-epiprocess. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V.