MX26L1620

Storage Temperature
Plastic Packages . . . . . . . . . . . . . .......-65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . ....-65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . .  . . .  .-0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . .... . . .  . -0.5 V to +12.5 V
All other pins (Note 1) . . . . . . .  . . .-0.5 V to V_CC +0.5 V
Output Short Circuit Current (Note 3) . . . . . .  . .200 mA
Commercial (C) Devices
Ambient Temperature (T_A ). . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T_A ). . . . . . . -40°C to +85°CVCC
Supply Voltages
VCC for full voltage range. . . . . . . . . . .  .+2.7 V to 3.6 V

The MX26L1620 is a 16M bit MTP EPROM TM organized as 1M bytes of 16 bits. MXIC's MTP EPROM TM offer the most cost-effective and reliable read/write non-volatile random access memory. The MX26L1620 is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX26L1620 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26L1620 has separate chip enable (CE) and output enable OE controls. MXIC's MTP EPROM TM  augment EPROM functionality with in-circuit electrical erasure and programming. The MX26L1620 uses a command register to manage this functionality.

MXIC's MTP EPROM TM  technology reliably stores memory contents even after 100 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.

The MX26L1620 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/ Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epiprocess. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V.