Features: GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 16M:16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure
32M:33,554,432 x 1 bit structure or 16,772,216 x 2 bits (two I/O read mode) structure
64M:67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O read mode) structure
• 512 Equal Sectors with 4K byte each (16Mb)
1024 Equal Sectors with 4K byte each (32Mb)
2048 Equal Sectors with 4K byte each (64Mb)
- Any Sector can be erased individually
• 32 Equal Blocks with 64K byte each (16Mb)
64 Equal Blocks with 64K byte each (32Mb)
128 Equal Blocks with 64K byte each (64Mb)
- Any Block can be erased individually
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 1.5V to 2.5V
PERFORMANCE
• High Performance
- Fast access time: 86MHz serial clock (15pF + 1TTL Load) and 66MHz serial clock (30pF + 1TTL Load)
- Serial clock of two I/O read mode : 50MHz (15pF + TTL Load), which is equivalent to 100MHz
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 60ms(typ.) /sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip for
16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb
• Low Power Consumption
- Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 20mA (max.)
- Low active erase current: 20mA (max.)
- Low standby current: 20uA (max.)
- Deep power-down mode 1uA (typical)
• Typical 100,000 erase/program cycles
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instructions
- Additional 512-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
• Status Register Feature
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- Both REMS and REMS2 commands for 1-byte manufacturer ID and 1-byte device ID
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI Input
- Serial Data Input
• SO Output
- Serial Data Output
• WP#/ACC pin
- Hardware write protection and program/erase acceleration
• HOLD# pin
- pause the chip without diselecting the chip
• PACKAGE
- 16-pin SOP (300mil)
- 8-land WSON (8x6mm or 6x5mm)
- 8-pin SOP (200mil, 150mil)
- 8-pin PDIP (300mil)
- 8-land USON (4x4mm)
- All Pb-free devices are RoHS CompliantPinout
Specifications
|
RATING |
VALUE |
|
Ambient Operating Temperature |
-40 to 85 for Industrial grade |
|
Storage Temperature |
-55 to 125 |
|
Applied Input Voltage |
-0.5V to 4.6V |
|
Applied Output Voltage |
-0.5V to 4.6V |
|
VCC to Ground Potential |
-0.5V to 4.6V |
NOTICE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see Figure 4, 5.
DescriptionThe MX25L1605D are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two I/O read mode, the structure becomes 8,388,608 bits x 2. The MX25L3205D are 33,554,432 bit serial Flash memory, which is configured as 4,194,304 x 8 internally. When it is in two I/O read mode, the structure becomes 16,772,216 bits x 2. The MX25L6405D are 67,108,864 bit serial Flash memory, which is configured as 8,388,608 x 8 internally. When it is in two I/O read mode, the structure becomes 33,554,432 bits x 2. (please refer to the "Two I/O Read mode" section). The MX25L1605D/3205D/6405D feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output.
The MX25L1605D/3205D/6405D provides sequential read operation on whole chip.
After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis for Continuously program mode, and erase command is executes on sector (4K-byte), or block (64K-byte), or whole chip basis.To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for more details.
When the device is not in operation and CS# is high, it is put in standby mode and draws less than 20uA DC current.
The MX25L1605D/3205D/6405D utilizes MXIC's proprietary memory cell, which reliably stores memory contents even
after typical 100,000 program and erase cycles.
MX25L1605D Data Sheet
