MX25L12845E

GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (two I/O mode) structure or 33,554,432 x 4 bits (four I/O
mode) structure
• 4096 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 512 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 256 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read (Normal Serial Mode)
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 70MHz with 4 dummy cycles
- 4 I/O: 70MHz with 6 dummy cycles
- Fast read (Double Transfer Rate Mode)
- 1 I/O: 50MHz with 6 dummy cycles
- 2 I/O: 50MHz with 6 dummy cycles
- 4 I/O: 50MHz with 8 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 90ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 80s(typ.) /chip
• Low Power Consumption
- Low active read current: 45mA(max.) at 104MHz, 40mA(max.) at 66MHz and 30mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 100uA (max.)
- Deep power down current: 40uA (max.)
• Typical 100,000 erase/program cycles
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Flexible block or individual block protect selection
The BP0-BP3 status bits define the size of the area to be software protection against program and erase instructions
- Additional 4K bits secured OTP for unique identifier
• Auto Erase and Auto Program Algorithms
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse width (Any page to be programed should have page in the erased state first.)
• Status Register Feature
• Electronic Identification
- JEDEC 1-byte Manufacturer ID and 2-byte Device ID
- RES command for 1-byte Device ID
- Both REMS,REMS2, REMS4 and REMS4D commands for 1-byte Manufacturer ID and 1-byte Device ID
• Support Common Flash Interface (CFI)(TBD)
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• SO/SIO1/PO7
- Serial Data Output or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode or Parallel Data
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O mode
• NC/SIO3
- NC pin or serial data Input/Output for 4 x I/O mode
• PO0~PO6
- For parallel mode data
• PACKAGE
- 16-pin SOP (300mil)
- All Pb-free devices are RoHS Compliant

NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see Figure 2, 3.

MX25L12845E is 134,217,728 bits serial Flash memory, which is configured as 16,777,216 x 8 internally. When it is in two or four I/O mode, the structure becomes 67,108,864 bits x 2 or 33,554,432 bits x 4. The MX25L12845E features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.

MX25L12845E provides high performance read mode, which may latch address and data on both rising and falling edge of clock. By using this high performance read mode, the data throughput may be doubling. Moreover, the  erformance may reach direct code execution, the RAM size of the system may be reduced and further saving system cost.

MX25L12845E, MXSMIOTM (Serial Multi I/O) flash memory, provides sequential read operation on whole chip and multi-I/O features.

When it is in dual I/O mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in quad I/O mode, the SI pin, SO pin, WP# pin and NC pin become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data Input/Output. Parallel mode is also provided in this device.

MX25L12845E features 8 bit input/output for increasing throughputs. This feature is recommeded to be used for factory production purpose.

After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) asis, or word basis for Continuously Program mode, and erase command is executes on sector (4K-byte),block (32K-byte/64K-byte), or whole chip basis.

To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit.

When the device is not in operation and CS# is high, it is put in standby mode and draws less than 100uA DC current.

The MX25L12845E utilizes MXIC's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles.