Features: GENERAL• Serial Peripheral Interface compatible -- Mode 0 and Mode 3• 134,217,728 x 1 bit structure• 4096 equal sectors with 4K byte each256 equal sectors with 64K byte each- Any sector can be erased• Single Power Supply Operation- 2.7 to 3.6 volt for read, erase,...
MX25L12805D: Features: GENERAL• Serial Peripheral Interface compatible -- Mode 0 and Mode 3• 134,217,728 x 1 bit structure• 4096 equal sectors with 4K byte each256 equal sectors with 64K byte e...
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Automotive Connectors IN VEH COAXIAL CONN 6.7MM CONT SPACING
RATING | VALUE |
Ambient Operating Temperature | -40 to 85 for Industrial grade |
Storage Temperature | -55 to 125 |
Applied Output Voltage | -0.5V to 4.6V |
Applied Output Voltage | -0.5V to 4.6V |
VCC to Ground Potential | -0.5V to 4.6V |
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to 4.6V or -0.5V for period up to 20ns.
4. All input and output pins may overshoot to VCC+0.5V while VCC+0.5V is smaller than or equal to 4.6V.
The MX25L12805D is a CMOS 134,217,728 bit serial Flash Memory, which is configured as 16,777,216 x 8 internally. The MX25L12805D features a serial peripheral interface and software protocol allowing operation on a simple 3- wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.
The MX25L12805D provides sequential read operation on whole chip. User may start to read from any byte of the array. While the end of the array is reached, the device will wrap around to the beginning of the array and continuously outputs data until CS# goes high.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, and erase command is executed on sector (4K-byte), or block(64K-byte), or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for more details.
When the device is not in operation and CS# is high, it is put in standby mode and draws less than 20uA DC current.
The MX25L12805D utilizes MXIC's proprietary memory cell which reliably stores memory contents even after 100,000 program and erase cycles.