Features: • Industry Standard Pinout• Very Low Operating Current . . . . . . . . . . . . . . . . . . 8mA at VDD = 5V and Cycle Time = 1ms• Two Chip Select Inputs Simple Memory Expansion• Memory Retention for Standby. . . . . . . . . . . . . 2V (Min) Battery Voltage• O...
MWS5101: Features: • Industry Standard Pinout• Very Low Operating Current . . . . . . . . . . . . . . . . . . 8mA at VDD = 5V and Cycle Time = 1ms• Two Chip Select Inputs Simple Memory Expa...
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The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V. The MWS5101 and MWS5101A differ in input voltage characteristics (MWS5101A is TTL compatible).
Two MWS5101 Select inputs are provided to simplify system expansion. An Output Disable control provides Wire-OR capability and is also useful in common Input/Output systems by forcing the output into a high impedance state during a write operation independent of the Chip Select input condition. The output assumes a high impedance state when the Output Disable is at high level or when the chip is deselected by CS1 and/or CS2.
The high noise immunity of the CMOS technology is preserved in this design. For TTL interfacing at 5V operation, excellent system noise margin is preserved by using an external pull-up resistor at each input.
For applications requiring wider temperature and operating voltage ranges, the mechanically and functionally equivalent static RAM, CDP1822 may be used.
The MWS5101 and MWS5101A types are supplied in 22 lead hermetic dual-in-line, sidebrazed ceramic packages (D suffix), in 22 lead dual-in-line plastic packages (E suffix), and in chip form (H suffix).