Discrete Semiconductor Modules 80 Amps 1200V
MWI80-12T6K: Discrete Semiconductor Modules 80 Amps 1200V
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Product : | Power Semiconductor Modules | Type : | Six-Pack IGBT Modules |
Mounting Style : | Screw | Package / Case : | E1 |
Packaging : | Bulk |
Symbol | Conditions | Maximum Ratings | |
VCES | TVJ = 25 to 150 | 1200 | V |
VGES | ±20 | V | |
IC25 IC80 |
TC = 25 TC = 80 |
80 56 |
A A |
RBSOA | VGE = ±15 V; RG = 18; TVJ = 125 Clamped inductive load; L = 100 µH |
120 VCES |
A |
tSC (SCSOA) |
VCE = 900V; VGE = ±15 V; RG = 18; TVJ = 125 SCSOA; non-repetitive |
10 | µs |
Ptot | TC = 25 | 270 | W |
Technical/Catalog Information | MWI80-12T6K |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Configuration | Three Phase Inverter |
Input | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 80A |
Power - Max | 270W |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
Current - Collector Cutoff (Max) | 1mA |
NTC Thermistor | Yes |
Input Capacitance (Cies) @ Vce | 3.6nF @ 25V |
Mounting Type | Chassis Mount |
Package / Case | E1 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MWI80 12T6K MWI8012T6K |