MWI75-06A7T Selling Leads, Price trend , Ixys, MWI75-06A7T DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00141712 Detail

MWI75-06A7T: IGBT Modules 75 Amps 600V

MWI75-06A7T Data Sheet

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Part Number:: MWI75-06A7T
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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What is this?

MWI75-06A7 evaluate
Discrete Semiconductor Modules 75 Amps 600V
MWI75-12A5 evaluate
Features: · NPT IGBT technology· low saturation voltage· low switching losses· switching frequency...
MWI75-12A8 evaluate
Discrete Semiconductor Modules IGBT MOD 1200V, 75A

Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Hex
Collector- Emitter Voltage VCEO Max :	600 V	Continuous Collector Current at 25 C :	90 A
Maximum Operating Temperature :	+ 150 C	Package / Case :	E2
Packaging :	Bulk

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Continuous Collector Current at 25 C : 90 A
Package / Case : E2

Features:

·NPT IGBT technology
·low saturation voltage
·low switching losses
·switching frequency up to 30 kHz
·square RBSOA, no latch up
·high short circuit capability
·positive temperature coefficient for easy parallelling
·MOS input, voltage controlled
·ultra fast free wheeling diodes
·solderable pins for PCB mounting
·package with copper base plate

Application

·AC motor control
·AC servo and robot drives
·power supplies

Specifications

Symbol	Conditions	Maximum Ratings
V_CES	T_VJ= 25 to 150	600	V
V_GES		±20	V
I_C25I_C80	T_C = 25 T_C = 80		A A
RBSOA	V_GE = ±15 V; R_G = 18; T_VJ= 125 Clamped inductive load; L = 100 µH	I_CM= 120 V_CEK V_CES	A
t_SC (SCSOA)	V_CE= V_CES; V_GE = ±15 V; R_G = 18; T_VJ = 125 non-repetitive	10	µs
P_tot	T_C= 25	280	W

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MWI75-06A7T

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