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MWI50-12A7T

IGBT Modules 50 Amps 1200V

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SeekIC No. : 00141710 Detail

MWI50-12A7T: IGBT Modules 50 Amps 1200V

MWI50-12A7T Data Sheet

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Part Number:
MWI50-12A7T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 1200 V Continuous Collector Current at 25 C : 85 A
Maximum Operating Temperature : + 150 C Package / Case : E2
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 85 A
Packaging : Bulk
Package / Case : E2


Features:

·NPT IGBT technology
·low saturation voltage
·low switching losses
·switching frequency up to 30 kHz
·square RBSOA, no latch up
·high short circuit capability
·positive temperature coefficient for easy parallelling
·MOS input, voltage controlled
·ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate


Application

·AC motor control
·AC servo and robot drives
·power supplies


Specifications

Symbol Conditions Maximum Ratings
VCES TVJ = 25 to 150 1200 V
VGES   ±20 V
IC25
IC80		 TC = 25
TC = 80		 85
60		 A
A
RBSOA VGE = ±15 V; RG = 22; TVJ = 125
Clamped inductive load; L = 100 µH
ICM = 100
VCEK VCES		 A
tSC
(SCSOA)		 VCE = VCES; VGE = ±15 V; RG = 22; TVJ = 125
non-repetitive		 10 µs
Ptot TC = 25 350 W



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