MWI35-12A7T Selling Leads, Price trend , Ixys, MWI35-12A7T DataSheet download, circuit diagram from SeekIC.com

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MWI35-12A7T: IGBT Modules 35 Amps 1200V

MWI35-12A7T Data Sheet

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Part Number:: MWI35-12A7T
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
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Upload time: 2024/11/13

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What is this?

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Discrete Semiconductor Modules 30 Amps 1200V

Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Hex
Collector- Emitter Voltage VCEO Max :	1200 V	Continuous Collector Current at 25 C :	62 A
Maximum Operating Temperature :	+ 150 C	Package / Case :	E2-Pack
Packaging :	Bulk

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Packaging : Bulk
Continuous Collector Current at 25 C : 62 A
Package / Case : E2-Pack

Features:

·NPT IGBT technology
·low saturation voltage
·low switching losses
·switching frequency up to 30 kHz
·square RBSOA, no latch up
·high short circuit capability
·positive temperature coefficient for easy parallelling
·MOS input, voltage controlled
·ultra fast free wheeling diodes
·solderable pins for PCB mounting
·package with copper base plate

Application

·AC motor control
·AC servo and robot drives
·power supplies

Specifications

Symbol	Conditions	Maximum Ratings
V_CES	T_VJ= 25 to 150	1200	V
V_GES		±20	V
I_C25I_C80	T_C = 25 T_C = 80	62 44	A A
RBSOA	V_GE = ±15 V; R_G = 39; T_VJ= 125 Clamped inductive load; L = 100 µH	I_CM = 70 V_CEK V_CES	A
t_SC (SCSOA)	V_CE= V_CES; V_GE = ±15 V; R_G = 39; T_VJ = 125 non-repetitive	10	µs
P_tot	T_C= 25	280	W

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MWI35-12A7T

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