MW4IC2230NBR1

RF Amplifier 2.1GHZ 28V TO272WBN

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SeekIC No. : 00612950 Detail

MW4IC2230NBR1: RF Amplifier 2.1GHZ 28V TO272WBN

floor Price/Ceiling Price

Part Number:
MW4IC2230NBR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Type : Power Amplifier Operating Frequency : 2400 MHz
Maximum Operating Temperature : + 200 C Mounting Style : SMD/SMT
Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Package / Case :
Mounting Style : SMD/SMT
Packaging : Reel
Type : Power Amplifier
Maximum Operating Temperature : + 200 C
Operating Frequency : 2400 MHz


Description

The MW4IC2030MBR1 belongs to MW4IC2230NBR1 family which wideband integrated circuit is designed with on-chip matching that makes it usable from 1930 to 1990 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

The driver applications of MW4IC2230NBR1 can be summarized as (1)typical CDMA Performance: VDD = 27 Volts, IDQ1 = 220 mA, IDQ2 = 240 mA, Pout = 1 Watt Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain 24 dB; (2)ACPR @ 885 kHz Offset -63 dBc in 30 kHz Channel Bandwidth; (3)capable of handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW output power; (4)stable into a 3:1 VSWR. all spurs below -60 dBc @ 0 to 43 dBm CW Pout.; (5)on-chip matching (50 Ohm Input, >4 Ohm Output); (6)integrated temperature compensation capability with enable/disable function; (7)on-chip current mirror gm reference FET for self biasing application (1); (8)integrated ESD protection; (9)200°C capable plastic package; (10)in tape and reel. R1 Suffix = 500 Units per 44 mm, 13 inch reel.

The absolute maximum ratings of MW4IC2230NBR1 are (1)drain-source voltage VDSS: -0.5, +65 Vdc; (2)gate-source voltage VGS: -0.5, +15 Vdc; (3)storage temperature Range Tstg: -65 to +175 °C; (4)operating junction temperature TJ: 200 °C; (5)input power pin: 20 dBm.




Parameters:

Technical/Catalog InformationMW4IC2230NBR1
VendorFreescale Semiconductor (VA)
CategoryRF and RFID
Package / CaseTO-272-16
Voltage - Supply26V
Current - Supply60mA
Gain31dB
Frequency1.6GHz ~ 2.4GHz
RF TypeCellular, CDMA, EDGE, GSM, TDMA, W-CDMA
PackagingCut Tape (CT)
Noise Figure-
P1db-
Test Frequency-
Drawing Number375; 1329-09; ; 16
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MW4IC2230NBR1
MW4IC2230NBR1
MW4IC2230NBR1CT ND
MW4IC2230NBR1CTND
MW4IC2230NBR1CT



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