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MURP20040CD

Features: • Stable, High Temperature, Glass Passivated Junction• Monolithic Dual Die Construction. May be Paralleled for High Current Output Mechanical Characteristics:• Case: Molded Epoxy with Metal Heatsink Base• Weight: 80 grams (approximately)• Finish: All Externa...

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MURP20040CD: Features: • Stable, High Temperature, Glass Passivated Junction• Monolithic Dual Die Construction. May be Paralleled for High Current Output Mechanical Characteristics:• Case: Mold...

MURP20040CD Data Sheet

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Part Number:
MURP20040CD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

• Stable, High Temperature, Glass Passivated Junction
• Monolithic Dual Die Construction. May be Paralleled for High Current Output
   Mechanical Characteristics:
• Case: Molded Epoxy with Metal Heatsink Base
• Weight: 80 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant
• Base Plate Torques: See procedure given in the Package Outline Section
• Shipped 25 units per tray
• Marking: URP20040CT




Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 400 Volts
Average Rectified Forward Current Per Diode
(TC = 140°C, Rated VR) Per Device		 IF(AV) 4.0
8.0		 Amps
Peak Repetitive Surge Current, Per Diode
(Rated VR, Square Wave, 20 kHz), TC = 140°C		 IFM 16 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)		 IFSM 100 Amps
Operating Junction Temperature TJ 55 to +175 °C
Operating Junction and Storage Temperature TJ, Tstg -55 to +150 °C



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