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MURH860CD

Features: • Ultrafast 35 Nanosecond Recovery Times• 175°C Operating Junction Temperature• Popular TO-220 Package• Epoxy Meets UL94, VO @ 1/8,• High Temperature Glass Passivated Junction• High Voltage Capability to 600 Volts• Low Leakage Specified @ 150°C C...

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MURH860CD: Features: • Ultrafast 35 Nanosecond Recovery Times• 175°C Operating Junction Temperature• Popular TO-220 Package• Epoxy Meets UL94, VO @ 1/8,• High Temperature Glass Pa...

MURH860CD Data Sheet

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Part Number:
MURH860CD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Ultrafast 35 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Popular TO-220 Package
• Epoxy Meets UL94, VO @ 1/8,
• High Temperature Glass Passivated Junction
• High Voltage Capability to 600 Volts
• Low Leakage Specified @ 150°C Case Temperature
• Current Derating @ Both Case and Ambient Temperatures


Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 600 Volts
Average Rectified Forward Current Per Diode
(TC = 140°C, Rated VR) Per Device		 IF(AV) 4.0
8.0		 Amps
Peak Repetitive Surge Current, Per Diode
(Rated VR, Square Wave, 20 kHz), TC = 140°C		 IFM 16 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)		 IFSM 100 Amps
Operating Junction and Storage Temperature TJ, Tstg -65 to +175 °C



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