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MURH840CD

Features: • Ultrafast 28 Nanosecond Recovery Time• 175°C Operating Junction Temperature• Popular TO220 Package• Epoxy Meets UL94, VO @ 1/8,• High Temperature Glass Passivated Junction• High Voltage Capability to 400 Volts• Low Leakage Specified @ 150°C Cas...

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MURH840CD: Features: • Ultrafast 28 Nanosecond Recovery Time• 175°C Operating Junction Temperature• Popular TO220 Package• Epoxy Meets UL94, VO @ 1/8,• High Temperature Glass Pass...

MURH840CD Data Sheet

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Part Number:
MURH840CD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultrafast 28 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO220 Package
• Epoxy Meets UL94, VO @ 1/8,
• High Temperature Glass Passivated Junction
• High Voltage Capability to 400 Volts
• Low Leakage Specified @ 150°C Case Temperature
• Current Derating @ Both Case and Ambient Temperatures


Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 400 Volts
Average Rectified Forward Current Per Diode
(TC = 140°C, Rated VR) Per Device		 IF(AV) 4.0
8.0		 Amps
Peak Repetitive Surge Current, Per Diode
(Rated VR, Square Wave, 20 kHz), TC = 140°C		 IFM 16 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)		 IFSM 100 Amps
Controlled Avalanche Energy WAVAL 20 mJ
Operating Junction and Storage Temperature TJ, Tstg -65 to +175 °C

 

 




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