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MURH8100E

Features: * 20 mjoules Avalanche Energy Guaranteed* Ultrafast 50 Nanoseconds Recovery Time* Stable, High Temperature, Glass Passivated Junction* Monolithic Dual Die Construction. May be Paralleled for High Current Output.PinoutSpecifications Rating Symbol Value Unit Peak Repetitive Reve...

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MURH8100E: Features: * 20 mjoules Avalanche Energy Guaranteed* Ultrafast 50 Nanoseconds Recovery Time* Stable, High Temperature, Glass Passivated Junction* Monolithic Dual Die Construction. May be Paralleled f...

MURH8100E Data Sheet

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Part Number:
MURH8100E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

* 20 mjoules Avalanche Energy Guaranteed
* Ultrafast 50 Nanoseconds Recovery Time
* Stable, High Temperature, Glass Passivated Junction
* Monolithic Dual Die Construction. May be Paralleled for High Current Output.


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM

VRWM

VR
 1000 V
Average Rectified Forward Current Per Leg
(At Rated VR , TC = 150° C) Per Package
 IO
 4.0 A
Peak Repetitive Forward Current Per Leg
(At Rated VR , Square Wave, 20 kHz, TC = 150°C)
 IFRM
 8.0 A
NonRepetitive Peak Surge Current Per Package
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)		 IFSM
 100 A
Storage / Operating Case Temperature Tstg ,TC
55to+175
°C
Operating Junction Temperature T J
 55to+175
°C



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