MUR3020PD

Features: • Ultrafast 35 and 60 Nanosecond Recovery Time• 175°C Operating Junction Temperature• High Voltage Capability to 600 Volts• Low Forward Drop• Low Leakage Specified @ 150°C Case Temperature• Current Derating Specified @ Both Case and Ambient Temperature...

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SeekIC No. : 004431238 Detail

MUR3020PD: Features: • Ultrafast 35 and 60 Nanosecond Recovery Time• 175°C Operating Junction Temperature• High Voltage Capability to 600 Volts• Low Forward Drop• Low Leakage Spec...

floor Price/Ceiling Price

Part Number:
MUR3020PD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

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Product Details

Description



Features:

• Ultrafast 35 and 60 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• High Voltage Capability to 600 Volts
• Low Forward Drop
• Low Leakage Specified @ 150°C Case Temperature
• Current Derating Specified @ Both Case and Ambient Temperatures
• Epoxy Meets UL94, VO @ 1/8,
• High Temperature Glass Passivated Junction



Specifications

Rating Symbol MUR3020PT MUR3020PT MUR3060PT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 400 600 Volts
Average Rectified Forward Voltage, (Rated VR), TC = 160°C
Per Leg
Per Total Device
IF(AV) 15 @ TC = 150°C
30 @ TC = 150°C
15 @ TC =
30 145°C
Amps
Peak Repetitive Surge Current, Per Diode
(Rated VR, Square Wave, 20 kHz), TC = 140°C
IFM 30
@ TC = 150°C
30
@ TC =145°C
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 200 150 Amps
Operating Junction Temperature and Storage Temperature TJ, Tstg -65 to +175 °C



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