MUN5316DW1T1G

Transistors Switching (Resistor Biased) 100mA Complementary 50V NPN & PNP

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MUN5316DW1T1G: Transistors Switching (Resistor Biased) 100mA Complementary 50V NPN & PNP

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Part Number:
MUN5316DW1T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : NPN/PNP
Typical Input Resistor : 4.7 KOhms Mounting Style : SMD/SMT
Package / Case : SC-88-6 Collector- Emitter Voltage VCEO Max : 50 V
Continuous Collector Current : 0.1 A Peak DC Collector Current : 100 mA
Power Dissipation : 187 mW Maximum Operating Temperature : + 150 C
Packaging : Reel    

Description

Typical Resistor Ratio :
Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Typical Input Resistor : 4.7 KOhms
Configuration : Dual
Peak DC Collector Current : 100 mA
Transistor Polarity : NPN/PNP
Continuous Collector Current : 0.1 A
Package / Case : SC-88-6
Power Dissipation : 187 mW


Features:

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
• Pb−Free Package is Available



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc



Description

The MUN5316DW1T1G BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5316DW1T1G series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.



Parameters:

Technical/Catalog InformationMUN5316DW1T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max385mW
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MUN5316DW1T1G
MUN5316DW1T1G
MUN5316DW1T1GOSCT ND
MUN5316DW1T1GOSCTND
MUN5316DW1T1GOSCT



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