MUN5312DW1T1

Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Configuration : Dual
Typical Input Resistor : 22 KOhms
Peak DC Collector Current : 100 mA
Typical Resistor Ratio : 1
Transistor Polarity : NPN/PNP
Continuous Collector Current : 0.1 A
Package / Case : SC-88-6
Power Dissipation : 187 mW


Features:

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.


Specifications

Rating	Symbol	Value	Unit
CollectorBase Voltage	VCBO	50	Vdc
CollectorEmitter Voltage	VCEO	50	Vdc
Collector Current	IC	100	mAdc

Description

The MUN5312DW1T1 BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5312DW1T1 series, two complementary BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium.